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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1762 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SB1185 APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 5 3 4.5 TC=25ae 25 150 -55~150 Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature Open collector UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA , IB=0 IC=50|I IE=50|I A , IE=0 A , IC=0 MIN 50 60 5 2SD1762 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob TYP. MAX UNIT V V V IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=40V IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=3V IE=-0.5A ; VCE=5V;f=30MHz IE=0 ; VCB=10V ,f=1MHz 60 90 1.0 1.5 1 1 320 |I |I V V A A hFE Classifications D 60-120 E NDU ICO E SEM ANG INCH Output capacitance TOR 40 MHz pF F 100-200 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1762 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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